IPD200N15N3GATMA1

IPD200N15N3GATMA1
Mfr. #:
IPD200N15N3GATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET MV POWER MOS
Lifecycle:
New from this manufacturer.
Datasheet:
IPD200N15N3GATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-252-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
150 V
Id - Continuous Drain Current:
50 A
Rds On - Drain-Source Resistance:
20 mOhms
Vgs th - Gate-Source Threshold Voltage:
2 V
Vgs - Gate-Source Voltage:
10 V
Qg - Gate Charge:
23 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
150 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
OptiMOS
Packaging:
Reel
Height:
2.3 mm
Length:
6.5 mm
Series:
OptiMOS 3
Transistor Type:
1 N-Channel
Width:
6.22 mm
Brand:
Infineon Technologies
Forward Transconductance - Min:
29 S
Fall Time:
6 ns
Product Type:
MOSFET
Rise Time:
11 ns
Factory Pack Quantity:
2500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
23 ns
Typical Turn-On Delay Time:
14 ns
Part # Aliases:
G IPD200N15N3 SP001127820
Unit Weight:
0.139332 oz
Tags
IPD200N15N3G, IPD200N1, IPD200, IPD20, IPD2, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 150 V 20 mOhm 23 nC OptiMOS™ Power Mosfet - TO-252-3
***p One Stop Japan
Trans MOSFET N-CH 150V 50A Automotive 3-Pin(2+Tab) DPAK T/R
***ineon SCT
The 150V OptiMOS™ achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor, PG-TO252-3, RoHS
***ment14 APAC
MOSFET, N CH, 50A, 150V, PG-TO252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:150V; On Resistance Rds(on):16mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:150W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Power Dissipation Pd:150W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
The 150V OptiMOS achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS part. | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V8 0V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
Part # Mfg. Description Stock Price
IPD200N15N3GATMA1
DISTI # V72:2272_06383142
Infineon Technologies AGTrans MOSFET N-CH 150V 50A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
0
    IPD200N15N3GATMA1
    DISTI # V36:1790_06383142
    Infineon Technologies AGTrans MOSFET N-CH 150V 50A Automotive 3-Pin(2+Tab) DPAK T/R
    RoHS: Compliant
    0
    • 2500000:$0.9487
    • 1250000:$0.9495
    • 250000:$0.9783
    • 25000:$1.0150
    • 2500:$1.0200
    IPD200N15N3GATMA1
    DISTI # IPD200N15N3GATMA1CT-ND
    Infineon Technologies AGMOSFET N-CH 150V 50A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    8101In Stock
    • 1000:$1.2771
    • 500:$1.5414
    • 100:$1.8760
    • 10:$2.3340
    • 1:$2.6000
    IPD200N15N3GATMA1
    DISTI # IPD200N15N3GATMA1DKR-ND
    Infineon Technologies AGMOSFET N-CH 150V 50A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    8101In Stock
    • 1000:$1.2771
    • 500:$1.5414
    • 100:$1.8760
    • 10:$2.3340
    • 1:$2.6000
    IPD200N15N3GATMA1
    DISTI # IPD200N15N3GATMA1TR-ND
    Infineon Technologies AGMOSFET N-CH 150V 50A TO252-3
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape & Reel (TR)
    7500In Stock
    • 5000:$1.1117
    • 2500:$1.1544
    IPD200N15N3GATMA1
    DISTI # IPD200N15N3GATMA1
    Infineon Technologies AGTrans MOSFET N-CH 150V 50A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD200N15N3GATMA1)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel
    Americas - 0
    • 25000:$1.0339
    • 15000:$1.0529
    • 10000:$1.0899
    • 5000:$1.1309
    • 2500:$1.1729
    IPD200N15N3GATMA1
    DISTI # SP001127820
    Infineon Technologies AGTrans MOSFET N-CH 150V 50A 3-Pin TO-252 T/R (Alt: SP001127820)
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape and Reel
    Europe - 0
    • 25000:€0.9909
    • 15000:€1.0309
    • 10000:€1.0639
    • 5000:€1.1469
    • 2500:€1.4759
    IPD200N15N3GATMA1
    DISTI # 60R2704
    Infineon Technologies AGTrans MOSFET N-CH 150V 50A 3-Pin TO-252 T/R - Product that comes on tape, but is not reeled (Alt: 60R2704)
    RoHS: Compliant
    Min Qty: 1
    Container: Ammo Pack
    Americas - 0
      IPD200N15N3GATMA1
      DISTI # 60R2704
      Infineon Technologies AGMOSFET, N CHANNEL, 150V, 50A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:150V,On Resistance Rds(on):0.016ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes2490
      • 1000:$1.2000
      • 500:$1.4400
      • 250:$1.5500
      • 100:$1.6500
      • 50:$1.7900
      • 25:$1.9300
      • 10:$2.0700
      • 1:$2.5600
      IPD200N15N3GATMA1
      DISTI # 726-IPD200N15N3GA
      Infineon Technologies AGMOSFET MV POWER MOS
      RoHS: Compliant
      10425
      • 1:$2.3900
      • 10:$2.0300
      • 100:$1.6200
      • 500:$1.4200
      • 1000:$1.1800
      • 2500:$1.1000
      • 5000:$1.0500
      IPD200N15N3GATMA1
      DISTI # 1702287
      Infineon Technologies AGMOSFET N-CH 150V 50A OPTIMOS3 DPAK, RL12360
      • 5000:£0.7830
      • 2500:£0.8030
      IPD200N15N3GATMA1
      DISTI # 1775587
      Infineon Technologies AGMOSFET, N CH, 50A, 150V, PG-TO252-33277
      • 500:£1.1000
      • 250:£1.1800
      • 100:£1.2500
      • 10:£1.5800
      • 1:£2.1100
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      Availability
      Stock:
      17
      On Order:
      2000
      Enter Quantity:
      Current price of IPD200N15N3GATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $2.39
      $2.39
      10
      $2.03
      $20.30
      100
      $1.62
      $162.00
      500
      $1.42
      $710.00
      1000
      $1.18
      $1 180.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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