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IPB017N10N5LFATMA1

IPB017N10N5LFATMA1
Mfr. #:
IPB017N10N5LFATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET DIFFERENTIATED MOSFETS
Lifecycle:
New from this manufacturer.
Datasheet:
IPB017N10N5LFATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IPB017N10N5LFATMA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-263-7
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
100 V
Id - Continuous Drain Current:
180 A
Rds On - Drain-Source Resistance:
1.5 mOhms
Vgs th - Gate-Source Threshold Voltage:
2.2 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
210 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
375 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
OptiMOS
Packaging:
Reel
Series:
OptiMOS 5
Transistor Type:
1 N-Channel
Brand:
Infineon Technologies
Forward Transconductance - Min:
132 S
Fall Time:
27 ns
Product Type:
MOSFET
Rise Time:
23 ns
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
80 ns
Typical Turn-On Delay Time:
33 ns
Part # Aliases:
IPB017N10N5LF SP001503850
Unit Weight:
0.077603 oz
Tags
IPB017, IPB01, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 100V D2PAK-7
***ical
Trans MOSFET N-CH 100V 180A
***ronik
N-CH 100V 180A 1,5mOhm TO263-7
***et Europe
DIFFERENTIATED MOSFETS
***ark
Mosfet, N-Ch, 100V, 180A, 313W, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0015Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.3V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 100V, 180A, 313W, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0015ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.3V; Power Dissipation Pd:313W; Transistor Case Style:TO-263; No. of Pins:7Pins; Operating Temperature Max:150°C; Product Range:OptiMOS 5 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CAN N, 100V, 180A, 313W, TO-263; Polarità Transistor:Canale N; Corrente Continua di Drain Id:180A; Tensione Drain Source Vds:100V; Resistenza di Attivazione Rds(on):0.0015ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.3V; Dissipazione di Potenza Pd:313W; Modello Case Transistor:TO-263; No. di Pin:7Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:OptiMOS 5 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
OptiMOS Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET. | Summary of Features: Combination of low R DS(on) and wide safe operating area (SOA); High max. pulse current; High continuous pulse current | Benefits: Rugged linear mode operation; Low conduction losses; Higher in-rush current enabled for faster start-up and shorter down time | Target Applications: Telecom; Battery management
Light Electric Vehicles (LEV)
Infineon Light Electric Vehicles have world-changing potential utilizing the emission-free solution for rising megacities. LEV's apply new technology enabling greater power efficiency, smaller size, lighter weight, and lower cost solutions. LEVs cost less when compared to gasoline or battery powered EVs, making them affordable and hence attractive to emerging markets, where a transition to electrified mobility is in progress.
Part # Mfg. Description Stock Price
IPB017N10N5LFATMA1
DISTI # V72:2272_17076743		Infineon Technologies AGDIFFERENTIATED MOSFETS0
    IPB017N10N5LFATMA1
    DISTI # V36:1790_17076743    		Infineon Technologies AGDIFFERENTIATED MOSFETS0
    • 1000000:$3.3290
    • 500000:$3.3320
    • 100000:$3.5680
    • 10000:$3.9820
    • 1000:$4.0510
    IPB017N10N5LFATMA1
    DISTI # IPB017N10N5LFATMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 100V D2PAK-7
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		362In Stock
    • 500:$4.7911
    • 100:$5.5020
    • 10:$6.6460
    • 1:$7.3600
    IPB017N10N5LFATMA1
    DISTI # IPB017N10N5LFATMA1DKR-ND    		Infineon Technologies AGMOSFET N-CH 100V D2PAK-7
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		362In Stock
    • 500:$4.7911
    • 100:$5.5020
    • 10:$6.6460
    • 1:$7.3600
    IPB017N10N5LFATMA1
    DISTI # IPB017N10N5LFATMA1TR-ND    		Infineon Technologies AGMOSFET N-CH 100V D2PAK-7
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)    		On Order
    • 2000:$3.9013
    • 1000:$4.0514
    IPB017N10N5LFATMA1
    DISTI # SP001503850    		Infineon Technologies AGDIFFERENTIATED MOSFETS (Alt: SP001503850)
    RoHS: Compliant
    Min Qty: 1000    		Europe - 1000
    • 10000:€3.0900
    • 6000:€3.2900
    • 4000:€3.4900
    • 2000:€3.6900
    • 1000:€3.7900
    IPB017N10N5LFATMA1
    DISTI # IPB017N10N5LF    		Infineon Technologies AGDIFFERENTIATED MOSFETS (Alt: IPB017N10N5LF)
    RoHS: Compliant
    Min Qty: 2000    		Asia - 10000
    • 100000:$4.1422
    • 50000:$4.2031
    • 20000:$4.2658
    • 10000:$4.3304
    • 6000:$4.4658
    • 4000:$4.6098
    • 2000:$4.7635
    IPB017N10N5LFATMA1
    DISTI # IPB017N10N5LFATMA1    		Infineon Technologies AGDIFFERENTIATED MOSFETS - Tape and Reel (Alt: IPB017N10N5LFATMA1)
    RoHS: Compliant
    Min Qty: 1000
    Container: Reel    		Americas - 0
    • 6000:$3.5900
    • 10000:$3.5900
    • 4000:$3.7900
    • 2000:$3.8900
    • 1000:$4.0900
    IPB017N10N5LFATMA1
    DISTI # 93AC7097    		Infineon Technologies AGMOSFET, N-CH, 100V, 180A, 313W, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:180A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0015ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.3V,Power RoHS Compliant: Yes0
    • 500:$4.4700
    • 250:$4.9100
    • 100:$5.1300
    • 50:$5.5200
    • 25:$5.9200
    • 10:$6.2000
    • 1:$6.8600
    IPB017N10N5LFATMA1
    DISTI # 726-IPB017N10N5LFATM    		Infineon Technologies AGMOSFET DIFFERENTIATED MOSFETS
    RoHS: Compliant    		2970
    • 1:$6.7900
    • 10:$6.1400
    • 25:$5.8600
    • 100:$5.0800
    • 250:$4.8600
    • 500:$4.4300
    • 1000:$3.8500
    • 2000:$3.7100
    IPB017N10N5LFATMA1
    DISTI # XSKDRABV0033034    		Infineon Technologies AG 
    RoHS: Compliant    		3000 in Stock0 on Order
    • 3000:$4.9100
    • 1000:$5.2600
    IPB017N10N5LFATMA1
    DISTI # 2986455    		Infineon Technologies AGMOSFET, N-CH, 100V, 180A, 313W, TO-263
    RoHS: Compliant    		0
    • 100:$5.6100
    • 50:$5.8700
    • 25:$6.8000
    • 10:$6.9300
    • 5:$7.4700
    • 1:$8.2800
    IPB017N10N5LFATMA1
    DISTI # 2986455    		Infineon Technologies AGMOSFET, N-CH, 100V, 180A, 313W, TO-2633
    • 500:£3.4500
    • 250:£3.7700
    • 100:£3.9600
    • 10:£4.5600
    • 1:£5.8000
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    Availability
    Stock:
    Available
    On Order:
    1985
    Enter Quantity:
    Current price of IPB017N10N5LFATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $6.79
    $6.79
    10
    $6.14
    $61.40
    25
    $5.86
    $146.50
    100
    $5.08
    $508.00
    250
    $4.86
    $1 215.00
    500
    $4.43
    $2 215.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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