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IPD046N08N5ATMA1

IPD046N08N5ATMA1
Mfr. #:
IPD046N08N5ATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET DIFFERENTIATED MOSFETS
Lifecycle:
New from this manufacturer.
Datasheet:
IPD046N08N5ATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
DPAK-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
80 V
Id - Continuous Drain Current:
90 A
Rds On - Drain-Source Resistance:
4 mOhms
Vgs th - Gate-Source Threshold Voltage:
2.2 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
53 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
125 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
OptiMOS
Packaging:
Reel
Series:
OptiMOS 5
Transistor Type:
1 N-Channel
Brand:
Infineon Technologies
Forward Transconductance - Min:
41 S
Fall Time:
6 ns
Product Type:
MOSFET
Rise Time:
6 ns
Factory Pack Quantity:
2500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
21 ns
Typical Turn-On Delay Time:
11 ns
Part # Aliases:
IPD046N08N5 SP001475652
Tags
IPD04, IPD0, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 80V 90A TO252-3
***et Europe
DIFFERENTIATED MOSFETS
Part # Mfg. Description Stock Price
IPD046N08N5ATMA1
DISTI # V36:1790_17076461		Infineon Technologies AGOptiMOS 5 Power-Transistor, 80V0
    IPD046N08N5ATMA1
    DISTI # IPD046N08N5ATMA1-ND    		Infineon Technologies AGMOSFET N-CH 80V 90A TO252-3
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
    • 2500:$0.9869
    IPD046N08N5ATMA1
    DISTI # IPD046N08N5ATMA1    		Infineon Technologies AGDIFFERENTIATED MOSFETS - Tape and Reel (Alt: IPD046N08N5ATMA1)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel    		Americas - 0
    • 2500:$0.9569
    • 5000:$0.9229
    • 10000:$0.8889
    • 15000:$0.8589
    • 25000:$0.8439
    IPD046N08N5ATMA1
    DISTI # SP001475652    		Infineon Technologies AGDIFFERENTIATED MOSFETS (Alt: SP001475652)
    RoHS: Compliant
    Min Qty: 2500    		Europe - 0
    • 2500:€1.0839
    • 5000:€0.9029
    • 10000:€0.8339
    • 15000:€0.7739
    • 25000:€0.7229
    IPD046N08N5ATMA1
    DISTI # 726-IPD046N08N5ATMA1    		Infineon Technologies AGMOSFET DIFFERENTIATED MOSFETS
    RoHS: Compliant    		0
    • 1:$1.9500
    • 10:$1.6600
    • 100:$1.3300
    • 500:$1.1600
    • 1000:$0.9640
    • 2500:$0.8980
    • 5000:$0.8650
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    Availability
    Stock:
    Available
    On Order:
    1984
    Enter Quantity:
    Current price of IPD046N08N5ATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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