BF510,215

Mfr. #:: BF510,215
Manufacturer:: NXP Semiconductors
Description:: RF JFET Transistors TAPE7 FET-RFSS
Lifecycle:: New from this manufacturer.
Datasheet:: BF510,215 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: BF510,215 Datasheet BF510,215 Datasheet (P4-P6)BF510,215 Datasheet (P7-P9)
ECAD Model:
More Information:: BF510,215 more Information BF510,215 Product Details

Product Attribute
Attribute Value

Manufacturer:: NXP

Product Category:: RF JFET Transistors

RoHS:: Y

Transistor Type:: JFET

Technology:: Si

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 20 V

Vgs - Gate-Source Breakdown Voltage:: 20 V

Id - Continuous Drain Current:: 30 mA

Maximum Drain Gate Voltage:: 20 V

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 250 mW

Mounting Style:: SMD/SMT

Package / Case:: SOT-23

Packaging:: Reel

Configuration:: Single

Height:: 1 mm

Length:: 3 mm

Product:: RF JFET

Type:: JFET

Width:: 1.4 mm

Brand:: NXP Semiconductors

Forward Transconductance - Min:: 0.0001 S

Gate-Source Cutoff Voltage:: 0.8 V

Product Type:: RF JFET Transistors

Rds On - Drain-Source Resistance:: -

Factory Pack Quantity:: 3000

Subcategory:: Transistors

Part # Aliases:: 933505270215

Unit Weight:: 0.000282 oz

Tags: BF510, BF51, BF5

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BF510,215 Description

***ure Electronics: BF510 Series 10 V 30 mA 100 MHz N-Channel Silicon Field-Effect Transistor - SOT-23-3

***nell: TRANSISTOR, JFET, N-CH, 20V, SOT-23; Breakdown Voltage Vbr: 20V; Zero Gate Voltage Drain Current Idss Min: 3mA; Zero Gate Voltage Drain Current Idss Max: 700µA; Gate-Source Cutoff Voltage Vgs(off) Max: 800mV; Transistor Case Style: SOT-23; Transistor Type: JFET; No. of Pins: 3 Pin; Operating Temperature Max: 150°C; Product Range: BF510 to 513; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Pin Configuration: 1 = gate; 2 = drain; 3 = source

***ical: Trans JFET N-CH 20V 30mA Si 3-Pin TO-236AB T/R

***ponent Stockers USA: VHF BAND Si N-CHANNEL RF SMALL SIGNAL JFET

***ark: REEL 7" Q3/T4, BF510/TO-236AB/REELLP//, REEL ROHS COMPLIANT: YES

***icontronic: RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET

***i-Key: RF MOSFET N-CH JFET 10V TO236AB

*** Americas: STANDARD MARKING * REEL PACK, SMD, LOW PROFILE, 7'

*** Semiconductors SCT: N-channel silicon FET, TO-236AB, RoHS

***hardson RFPD: RF SMALL SIGNAL TRANSISTOR MOSFET

***ure Electronics: BF861C Series N-Channel 25 V Surface Mount JFET - SOT-23

***el Electronic: RF JFET, N CH, 25V, 25MA, 3-SOT-23 - More Details

***ical: Trans RF FET N-CH 25V 3-Pin TO-236AB T/R

***icontronic: Small Signal Field-Effect Transistor, 25V, 1-Element, N-Channel, Silicon, Junction FET, TO-236AB

*** Americas: STANDARD MARKING * REEL PACK, SMD, LOW PROFILE, 7'

***hardson RFPD: RF SMALL SIGNAL TRANSISTOR MOSFET

***nell: TRANSISTOR, JFET, N-CH, -25V, SOT-23; Drain Source Voltage Vds: 25V; Continuous Drain Current Id: 25mA; Power Dissipation Pd: 250mW; Operating Frequency Min: -; Operating Frequency Max: -; RF Transistor Case: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Breakdown Voltage Vbr: -25V; Gate-Source Cutoff Voltage Vgs(off) Max: -2V; No. of Pins: 3 Pin; Transistor Case Style: SOT-23; Transistor Type: JFET; Zero Gate Voltage Drain Current Idss Max: 25mA; Zero Gate Voltage Drain Current Idss Min: 12mA

***roFlash: N-Channel Fet, Reel 11" Q3 Ndp Largepq Low Profile, Tape + Reel Rohs Compliant: Yes

***et: Trans JFET N-CH 25V 10mA 3-Pin TO-236AB T/R

***hardson RFPD: RF SMALL SIGNAL TRANSISTOR MOSFET

***nell: JFET, 25V, 25V, 0.005A, TO-236AB; Breakdown Voltage Vbr: 25V; Zero Gate Voltage Drain Current Idss Min: 1mA; Zero Gate Voltage Drain Current Idss Max: 5mA; Gate-Source Cutoff Voltage Vgs(off) Max: -2.5V; Transistor Case Style: TO-236AB; Transistor Type: JFET; No. of Pins: 3 Pin; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***roFlash: N-channel Silicon Fet, Reel 7" Q3 Ndp Low Profile, Tape + Reel Rohs Compliant: Yes

***icontronic: RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-236AB

***nell: TRANSISTOR, JFET, N-CH, -6.5V, TO-236AB; Breakdown Voltage Vbr: 25V; Zero Gate Voltage Drain Current Idss Min: 12mA; Zero Gate Voltage Drain Current Idss Max: 60mA; Gate-Source Cutoff Voltage Vgs(off) Max: -6.5V; Transistor Case Style: TO-236AB; Transistor Type: JFET; No. of Pins: 3 Pin; Operating Temperature Max: 150°C; Product Range: PMBFJ Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***r Electronics: Small Signal Field-Effect Transistor, 0.05A I(D), 1-Element, N-Channel, Silicon, Junction FET

***Yang: Trans JFET N-CH 15V 50mA 3-Pin SC-59 T/R - Tape and Reel

***ure Electronics: Single N-Channel 15 V Surface Mount JFET - SOT-23

***emi: N-Channel JFET, 15V, 10 to 32mA, 35mS

***ark: Jfet, 15V, 0.032A, 150Deg C Rohs Compliant: Yes

***r Electronics: Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-236

***el Electronic: Trans JFET P-CH Automotive 3-Pin SOT-23 T/R

***emi: P-Channel JFET Transistor, 30 V

***emi: N-Channel MOSFET 50V, 100mA, Single CP

***ical: Trans MOSFET N-CH 50V 0.1A 3-Pin SC-59 T/R

***r Electronics: Small Signal Field-Effect Transistor

***Yang: MOSFET 0.1A 50V - Tape and Reel

***nell: MOSFET, N CH.HF, 50V, 0.1A, SOT23; Transistor Polarity:N-Channel; Current Id Max:100mA; Drain Source Voltage Vds:50V; On Resistance Rds(on):20ohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:12V; Power Dissipation:200mW; Transistor Case Style:SOT-23; No. of Pins:3

Image	Part #	Description
	Mfr.#: OPA1688IDR OMO.#: OMO-OPA1688IDR	Operational Amplifiers - Op Amps Op Amps
	Mfr.#: OPA1622IDRCR OMO.#: OMO-OPA1622IDRCR	Audio Amplifiers Audio Op Amp
	Mfr.#: BQ21040DBVT OMO.#: OMO-BQ21040DBVT	Battery Management 0.8A Sng Input Sng-Cell Li-Ion
	Mfr.#: SMM02040C2203FB300 OMO.#: OMO-SMM02040C2203FB300	MELF Resistors 1/4watt 220Kohms 1% 50ppm
	Mfr.#: OPA1688IDR OMO.#: OMO-OPA1688IDR-TEXAS-INSTRUMENTS	Operational Amplifiers - Op Amps 36V, 10MHz, Low Distortion High Drive Rail-to-Rail Output Audio Operational Amplifiers 8-SOIC -40 to 85
	Mfr.#: OPA1622IDRCR OMO.#: OMO-OPA1622IDRCR-TEXAS-INSTRUMENTS	Audio Amplifiers High Performance Bipolarinput AudioOP
	Mfr.#: C1608X5R0J106K080AE OMO.#: OMO-C1608X5R0J106K080AE-TDK	Multilayer Ceramic Capacitors MLCC - SMD/SMT 0603 6.3V 10uF X5R 10% Soft Term
	Mfr.#: NCP718ASN330T1G OMO.#: OMO-NCP718ASN330T1G-ON-SEMICONDUCTOR	300 MA LOW IQ WIDE INPUT
	Mfr.#: 1677 OMO.#: OMO-1677-KEYSTONE-ELECTRONICS	Rosie Revere, Engineer, Kid Book
	Mfr.#: 2287075-1 OMO.#: OMO-2287075-1-TE-CONNECTIVITY	CFP2 HARDWARE KIT, 1X2

BF510,215

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes