MRFE6VP8600HR5

Mfr. #:: MRFE6VP8600HR5
Manufacturer:: NXP / Freescale
Description:: RF MOSFET Transistors VHV6 600W NI1230H 50V
Lifecycle:: New from this manufacturer.
Datasheet:: MRFE6VP8600HR5 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: MRFE6VP8600HR5 more Information

Product Attribute
Attribute Value

Manufacturer:: NXP

Product Category:: RF MOSFET Transistors

RoHS:: Y

Transistor Polarity:: N-Channel

Technology:: Si

Vds - Drain-Source Breakdown Voltage:: 140 V

Gain:: 18.8 dB

Output Power:: 600 W

Maximum Operating Temperature:: + 150 C

Mounting Style:: SMD/SMT

Package / Case:: NI-1230

Packaging:: Reel

Configuration:: Dual

Operating Frequency:: 470 MHz to 860 MHz

Series:: MRFE6VP8600H

Type:: RF Power MOSFET

Brand:: NXP / Freescale

Forward Transconductance - Min:: 15.6 S

Pd - Power Dissipation:: 1.52 kW

Product Type:: RF MOSFET Transistors

Factory Pack Quantity:: 50

Subcategory:: MOSFETs

Vgs - Gate-Source Voltage:: 10 V

Vgs th - Gate-Source Threshold Voltage:: 2.07 V

Part # Aliases:: 935321656178

Unit Weight:: 0.464343 oz

Tags: MRFE6VP8, MRFE6VP, MRFE6V, MRFE6, MRFE, MRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MRFE6VP8600HR5 Description

***W: RF Power Transistor,470 to 860 MHz, 600 W, Typ Gain in dB is 19.3 @ 860 MHz, 50 V, LDMOS, SOT1787

***et Europe: Transistor RF FET N-CH 130V 470MHz to 860MHz 4-Pin NI-1230 T/R

***ical: Trans RF MOSFET N-CH 130V 5-Pin Case 375D-05 T/R

***el Electronic: RF MOSFET Transistors VHV6 600W NI1230H 50V

***DA Technology Co., Ltd.: Product Description Demo for Development.

***ment14 APAC: RF FET, 130V, 860MHZ-470MHZ, CASE 375D

***i-Key Marketplace: LDMOS BROADBAND RF POWER TRANSIS

***nell: RF FET, 130V, 860MHZ-470MHZ, CASE 375D; Drain Source Voltage Vds: 130V; Continuous Drain Current Id: -; Power Dissipation Pd: 1.052kW; Operating Frequency Min: 860MHz; Operating Frequency Max: 470MHz; RF Transistor Case: NI-1230; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: MRFE6VP8600H Series; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)

MRFE6VP8600HR5 More Information

MRFE6VP8600H LDMOS Broadband RF Power MOSFET: NXP's MRFE6VP8600H LDMOS N-Channel Broadband RF Power MOSFET is designed for broadband operation from 470 to 860 MHz. This device has an integrated input matching network for better power distribution. The NXP MRF6VP8600H is capable of handling 65:1 VSWR through all phase angles at 50 VDC, 860 MHz, has an exception efficiency for Class AB analog or digital television operation, has an integrated input matching, enables fast, easy and complete shutdown of the amplifier, and has an extended negative gate-source voltage range of -6.0 V to +10 V. These devices are ideally suited for use in analog or digital television transmitters.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
MRFE6VP8600HR5 DISTI # 21099683	NXP Semiconductors	Trans RF MOSFET N-CH 130V 5-Pin Case 375D-05 T/R RoHS: Compliant	21	1:$318.1500
MRFE6VP8600HR5 DISTI # MRFE6VP8600HR5CT-ND	NXP Semiconductors	FET RF 2CH 130V 860MHZ NI-1230 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	47In Stock	10:$267.3990 1:$279.2000
MRFE6VP8600HR5 DISTI # MRFE6VP8600HR5DKR-ND	NXP Semiconductors	FET RF 2CH 130V 860MHZ NI-1230 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	47In Stock	10:$267.3990 1:$279.2000
MRFE6VP8600HR5 DISTI # MRFE6VP8600HR5TR-ND	NXP Semiconductors	FET RF 2CH 130V 860MHZ NI-1230 RoHS: Compliant Min Qty: 50 Container: Tape & Reel (TR)	Temporarily Out of Stock	50:$253.8838
MRFE6VP8600HR5 DISTI # MRFE6VP8600HR5	Avnet, Inc.	Trans MOSFET N-CH 130V 4-Pin NI-1230 T/R - Tape and Reel (Alt: MRFE6VP8600HR5) RoHS: Compliant Min Qty: 50 Container: Reel	Americas - 0	50:$278.1900 100:$267.2900 200:$256.8900 300:$247.4900 500:$242.7900
MRFE6VP8600HR5 DISTI # 61AC0762	NXP Semiconductors	RF FET, 130V, 860MHZ-470MHZ, CASE 375D,Drain Source Voltage Vds:130V,Continuous Drain Current Id:-,Power Dissipation Pd:1.052kW,Operating Frequency Min:860MHz,Operating Frequency Max:470MHz,RF Transistor Case:NI-1230,No. of RoHS Compliant: Yes	50	1:$279.2100 10:$267.3900 25:$263.4500
MRFE6VP8600HR5 DISTI # 841-MRFE6VP8600HR5	NXP Semiconductors	RF MOSFET Transistors VHV6 600W NI1230H 50V RoHS: Compliant	155	1:$279.2100 5:$272.9800 10:$267.3900 25:$263.4500 50:$253.8800
MRFE6VP8600HR5 DISTI # MRFE6VP8600HR5	NXP Semiconductors	RF POWER TRANSISTOR RoHS: Compliant	48	1:$263.1200 10:$256.1900 25:$252.8700
MRFE6VP8600HR5 DISTI # 2890609	NXP Semiconductors	RF FET, 130V, 860MHZ-470MHZ, CASE 375D RoHS: Compliant	50	1:£218.0000 5:£199.0000
MRFE6VP8600HR5 DISTI # 2890609	NXP Semiconductors	RF FET, 130V, 860MHZ-470MHZ, CASE 375D RoHS: Compliant	50	1:$445.0300 10:$426.2100

Related products

Image	Part #	Description
	Mfr.#: MRFE6VP61K25HR6 OMO.#: OMO-MRFE6VP61K25HR6	RF MOSFET Transistors VHV6 1.25KW ISM NI1230H
	Mfr.#: MRFE6VP5150NR1 OMO.#: OMO-MRFE6VP5150NR1	RF MOSFET Transistors WIDEBAND RF POWER LDMOS TRANSISTORS, 1.8--600 MHz, 150 W CW, 50 V
	Mfr.#: MRFE6VP61K25NR6 OMO.#: OMO-MRFE6VP61K25NR6	RF MOSFET Transistors 1.8-600 MHz 1250 W CW 50 V
	Mfr.#: MRFE6VP100HR5 OMO.#: OMO-MRFE6VP100HR5	RF MOSFET Transistors VHV6 100W 50V ISM
	Mfr.#: MRFE6VP5600HR5 OMO.#: OMO-MRFE6VP5600HR5	RF MOSFET Transistors VHV6 600W 50V NI1230H
	Mfr.#: MRFE6VP6300-88 OMO.#: OMO-MRFE6VP6300-88	RF MOSFET Transistors MRFE6VP6300-88
	Mfr.#: MRFE6VP6300HSR5 OMO.#: OMO-MRFE6VP6300HSR5	RF MOSFET Transistors VHV6 300W50VISM NI780S-4
	Mfr.#: MRFE6VP100H OMO.#: OMO-MRFE6VP100H-1190	New and Original
	Mfr.#: MRFE6VP61K25GNR6 OMO.#: OMO-MRFE6VP61K25GNR6-NXP-SEMICONDUCTORS	TRANS RF LDMOS 1250W 50V
	Mfr.#: MRFE6VP6300HR5 OMO.#: OMO-MRFE6VP6300HR5-NXP-SEMICONDUCTORS	RF MOSFET Transistors VHV6 300W50VISM NI780H-4

Availability

Stock:: 156
On Order:: 2139
Enter Quantity:

Current price of MRFE6VP8600HR5 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$279.21~~; ~~$279.21~~

5: ~~$272.98~~; ~~$1 364.90~~

10: ~~$267.39~~; ~~$2 673.90~~

25: ~~$263.45~~; ~~$6 586.25~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

Start with

MRFE6VP8 4
MRFE6VP 40
MRFE6V 45
MRFE6 101
MRFE 105
MRF 2307

Newest Products

PCF85263 CMOS Real-Time Clock

NXP's tiny real-time clock/calendar is optimized for low power consumption and with automatic switching to battery on main power loss.
NFC Contactless Readers

NXP's NFC frontend with an advanced 32-bit microcontroller
Compare MRFE6VP8600HR5

MRFE6VP8600HR5 vs MRFE6VP8600HR6 vs MRFE6VP8600HSR5
Smart Charging Solutions

NXP's smart charging solution consists of a primary side flyback QR controller, a secondary side SR controller, and a protocol controller.
FRDM-KL26Z

FRDM-KL26Z is an ultra-low-cost development platform for Kinetis L series KL16 and KL26 MCUs built on ARM® Cortex™-M0+ processors.
Single-Coil Wireless Reference Design

Design is based on the WPC-A11 transmitter definition, comprising of a 5 VDC input source, full-bridge inverter topology and frequency-control methodology

More Newest Products

MRFE6VP8600HR5

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes