IRFB7446PBF

Mfr. #:: IRFB7446PBF
Manufacturer:: Infineon Technologies
Description:: MOSFET 40V 118A 3.3 mOhm HEXFET 62nC 99W
Lifecycle:: New from this manufacturer.
Datasheet:: IRFB7446PBF Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: IRFB7446PBF more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-220-3

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 40 V

Id - Continuous Drain Current:: 123 A

Rds On - Drain-Source Resistance:: 3.3 mOhms

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 93 nC

Pd - Power Dissipation:: 99 W

Tradename:: StrongIRFET

Packaging:: Tube

Height:: 15.65 mm

Length:: 10 mm

Width:: 4.4 mm

Brand:: Infineon Technologies

Product Type:: MOSFET

Factory Pack Quantity:: 1000

Subcategory:: MOSFETs

Part # Aliases:: SP001577760

Unit Weight:: 0.211644 oz

Tags: IRFB7446P, IRFB7446, IRFB744, IRFB74, IRFB7, IRFB, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

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IRFB7446PBF Description

***ineon SCT: 40V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB package, TO220-3, RoHS

***ure Electronics: Single N-Channel 40 V 3.3 mOhm 62 nC HEXFET® Power Mosfet - TO-220-3

***p One Stop: Trans MOSFET N-CH Si 40V 123A 3-Pin(3+Tab) TO-220AB Tube

*** Stop Electro: Power Field-Effect Transistor, 120A I(D), 40V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***nell: MOSFET, N-CH, 40V, 118A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0026ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:99W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-220AB; No. of Pins:3; MSL:(Not Applicable); SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C

***ineon: Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: AC-DC; Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Push-Pull

***ineon SCT: 40V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB package, TO220-3, RoHS

***ure Electronics: Single N-Channel 40 V 2.5 mOhm 90 nC HEXFET® Power Mosfet - TO-220-3

***Yang: Trans MOSFET N-CH 40V 208A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube

*** Stop Electro: Power Field-Effect Transistor, 120A I(D), 40V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***nell: MOSFET, N-CH, 40V, 120A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:208W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-220AB; No. of Pins:3; MSL:(Not Applicable); SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C

***ineon: Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: AC-DC; Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Push-Pull

***ure Electronics: Single N-Channel 30 V 9 mOhm 41 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***et: Trans MOSFET N-CH 30V 90A 3-Pin(3+Tab) TO-220AB

***(Formerly Allied Electronics): MOSFET, 30V, 90A, 9 MOHM, 27 NC QG, TO-220AB

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ment14 APAC: MOSFET, N, 30V, 90A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:30V; On Resistance Rds(on):9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:120W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:90A; Junction to Case Thermal Resistance A:1.04°C/W; On State resistance @ Vgs = 10V:9ohm; Package / Case:TO-220AB; Power Dissipation Pd:120W; Power Dissipation Pd:120W; Pulse Current Idm:360A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V

***ark: MOSFET,N CH,W DIODE,40V,90A,TO220AB; Transistor Polarity:N Channel; Continuous D

***(Formerly Allied Electronics): SUP90N04-3M3P-GE3 N-channel MOSFET Transistor; 90 A; 40 V; 3-Pin TO-220AB

***ment14 APAC: MOSFET,N CH,W DIODE,40V,90A,TO220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0027ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:125W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-220AB; No. of Pins:3; Operating Temperature Range:-55°C to +175°C; Voltage Vgs Max:20V

***(Formerly Allied Electronics): MOSFET, N Ch., 30V, 150A, 3.8 MOHM, 32 NC QG, TO-220AB, Pb-Free

*** Source Electronics: MOSFET N-CH 30V 150A TO-220AB / Trans MOSFET N-CH 30V 150A 3-Pin(3+Tab) TO-220AB Tube

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***ure Electronics: Single N-Channel 30 V 4.5 mOhm 47 nC HEXFET® Power Mosfet - TO-220-3

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 140 W

*** Stop Electro: Power Field-Effect Transistor, 75A I(D), 30V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance; Logic Level

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:150A; On Resistance, Rds(on):3.8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes

***ure Electronics: N-Channel 30 V 4.1 mOhm Flange Mount PowerTrench® Mosfet - TO-220

***emi: N-Channel PowerTrench® MOSFET 30V, 156A, 4.1mΩ

***ical: Trans MOSFET N-CH 30V 19A 3-Pin (3+Tab) TO-220AB Rail

*** Stop Electro: Power Field-Effect Transistor, 19A I(D), 30V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

***ark: RAIL/30V,92A,5.9m ohm ,NCH,TO220,POWER TRENCH MOSFET

***Yang: Trans MOSFET N-CH 30V 16A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube

***emi: N-Channel PowerTrench® MOSFET 30V, 92A, 5.9mΩ

***ure Electronics: N-Channel 30 V 5.9 mOhm PowerTrench Mosfet - TO-220AB

***r Electronics: Power Field-Effect Transistor, 80A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

IRFB7446PBF More Information

StrongIRFET™ Power MOSFETs: Infineon StrongIRFET™ Power MOSFET family are optimized for low RDS(on) and high current capability. These devices are ideal for low-frequency applications requiring performance and ruggedness. These MOSFETs have the highest current carrying capability in the industry. This feature leads to increased robustness and reliability for high power density applications which require high efficiency and reliability.

Market price

Part #	Mfg.	Description	Stock	Price
IRFB7446PBF DISTI # 24685756	Infineon Technologies AG	Trans MOSFET N-CH Si 40V 123A 3-Pin(3+Tab) TO-220AB Tube	3720	1150:$0.4656 350:$0.5088 50:$0.5808
IRFB7446PBF DISTI # 30606497	Infineon Technologies AG	Trans MOSFET N-CH Si 40V 123A 3-Pin(3+Tab) TO-220AB Tube	2000	200:$0.6847 100:$0.7076 50:$0.8071 18:$1.1985
IRFB7446PBF DISTI # IRFB7446PBF-ND	Infineon Technologies AG	MOSFET N-CH 40V 120A TO220 RoHS: Compliant Min Qty: 1 Container: Tube	527In Stock	1000:$0.6394 500:$0.8099 100:$1.0443 10:$1.3210 1:$1.4900
IRFB7446PBF DISTI # C1S322000489109	Infineon Technologies AG	Trans MOSFET N-CH Si 40V 123A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	2000	500:$0.4910 200:$0.5370 100:$0.5550 50:$0.6330 10:$0.9400 5:$1.1600
IRFB7446PBF DISTI # C1S322000489118	Infineon Technologies AG	Trans MOSFET N-CH Si 40V 123A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	3720	1000:$0.7270 500:$0.7870 100:$0.8760 50:$1.0400 25:$1.1600 5:$1.6000
IRFB7446PBF DISTI # V99:2348_13890762	Infineon Technologies AG	Trans MOSFET N-CH Si 40V 123A 3-Pin(3+Tab) TO-220AB Tube	1000	1000:$0.4388 500:$0.6498 100:$0.7169 10:$0.8772 1:$0.9870
IRFB7446PBF DISTI # SP001577760	Infineon Technologies AG	Trans MOSFET N-CH 40V 123A 3-Pin(3+Tab) TO-220AB Tube (Alt: SP001577760) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 450	1:€2.2199 10:€2.2139 25:€0.7639 50:€0.6759 100:€0.5649 500:€0.5599 1000:€0.5579
IRFB7446PBF DISTI # IRFB7446PBF	Infineon Technologies AG	Trans MOSFET N-CH 40V 123A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube (Alt: IRFB7446PBF) RoHS: Compliant Min Qty: 1000 Container: Tube	Americas - 0	1000:$0.4459 2000:$0.4299 4000:$0.4139 6000:$0.4009 10000:$0.3929
IRFB7446PBF DISTI # IRFB7446PBF	Infineon Technologies AG	Trans MOSFET N-CH 40V 123A 3-Pin(3+Tab) TO-220AB Tube (Alt: IRFB7446PBF) RoHS: Compliant Min Qty: 1000 Container: Tube	Asia - 0
IRFB7446PBF DISTI # 53W9271	Infineon Technologies AG	MOSFET Transistor, N Channel, 120 A, 40 V, 0.0026 ohm, 10 V, 3 V RoHS Compliant: Yes	577	1:$1.3300 10:$1.1500 100:$0.9040 500:$0.8110 1000:$0.6620
IRFB7446PBF DISTI # 942-IRFB7446PBF	Infineon Technologies AG	MOSFET 40V 118A 3.3 mOhm HEXFET 62nC 99W RoHS: Compliant	492	1:$1.2800 10:$1.0900 100:$0.8340 500:$0.7370 1000:$0.5820
IRFB7446PBF DISTI # 7769181	Infineon Technologies AG	STRONGIRFET MOSFET N-CH 40V 120A TO220AB, EA	1946	1:£2.0000 25:£0.5400 50:£0.5300 100:£0.5000 200:£0.4900
IRFB7446PBF DISTI # IRFB7446PBF	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,40V,123A,99W,TO220AB	329	1:$1.1400 3:$1.0300 10:$0.8500 50:$0.7700
IRFB7446PBF	International Rectifier	RoHS: Compliant	Europe - 769
IRFB7446PBF DISTI # IRFB7446PBF	Infineon Technologies AG	N-Ch 40V 120A 99W 0,0033R TO220AB RoHS: Compliant	210	10:€0.7075 50:€0.5275 200:€0.4675 500:€0.4500
IRFB7446PBF	Infineon Technologies AG	INSTOCK	831
IRFB7446PBF DISTI # 2253788	Infineon Technologies AG	MOSFET, N-CH, 40V, 118A, TO-220AB RoHS: Compliant	627	5:£0.9330 25:£0.5410 100:£0.5000 250:£0.4830 500:£0.4670
IRFB7446PBF DISTI # 2253788	Infineon Technologies AG	MOSFET, N-CH, 40V, 118A, TO-220AB RoHS: Compliant	577	1:$2.0300 10:$1.7300 100:$1.3300 500:$1.1700 1000:$0.9210
IRFB7446PBF	Infineon Technologies AG	40V,3.3m,123A,N-Channel Power MOSFET	800	1:$0.8200 100:$0.6800 500:$0.6000 1000:$0.5900

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	Mfr.#: 2N7002E-T1-E3 OMO.#: OMO-2N7002E-T1-E3-VISHAY	MOSFET N-CH 60V 240MA SOT-23

IRFB7446PBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes