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TGF2965-SM

TGF2965-SM
Mfr. #:
TGF2965-SM
Manufacturer:
Qorvo
Description:
RF JFET Transistors 30MHZ-3GHz 5W 50 Ohm Gain 18dB@2GHz 32V
Lifecycle:
New from this manufacturer.
Datasheet:
TGF2965-SM Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
TGF2965-SM more Information
Product Attribute
Attribute Value
Manufacturer:
Qorvo
Product Category:
RF JFET Transistors
RoHS:
Y
Transistor Type:
HEMT
Technology:
GaN SiC
Gain:
18 dB
Transistor Polarity:
P-Channel
Vds - Drain-Source Breakdown Voltage:
32 V
Vgs - Gate-Source Breakdown Voltage:
- 2.7 V
Id - Continuous Drain Current:
600 mA
Output Power:
6 W
Maximum Drain Gate Voltage:
-
Minimum Operating Temperature:
-
Maximum Operating Temperature:
-
Pd - Power Dissipation:
7.5 W
Mounting Style:
SMD/SMT
Package / Case:
QFN-16
Packaging:
Tray
Configuration:
Single
Operating Frequency:
30 MHz to 3 GHz
Brand:
Qorvo
Forward Transconductance - Min:
-
Gate-Source Cutoff Voltage:
-
Moisture Sensitive:
Yes
Product Type:
RF JFET Transistors
Rds On - Drain-Source Resistance:
-
Factory Pack Quantity:
100
Subcategory:
Transistors
Vgs th - Gate-Source Threshold Voltage:
-
Part # Aliases:
1123170
Unit Weight:
0.002014 oz
Tags
TGF296, TGF29, TGF2, TGF
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, 0.03 to 3 GHz, 5 W, 18 dB, 32 V, GaN, Plastic QFN
TGF2965-SM GaN RF Input-Matched Transistor
QorvoTGF2965-SM GaN RF Input-Matched Transistor is a 6W (P3dB), 50Ω-input matched discrete GaN on SiC HEMT which operates from 0.03 to 3.0GHz. The integrated input matching network enables wideband gain and power performance. The output can be matched on board to optimize power and efficiency for any region within the band.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
Part # Mfg. Description Stock Price
TGF2965-SM
DISTI # 772-TGF2965-SM		QorvoRF JFET Transistors 30MHZ-3GHz 5W 50 Ohm Gain 18dB@2GHz 32V
RoHS: Compliant		0
  • 1:$45.0000
  • 25:$40.0000
  • 100:$35.0000
  • 250:$32.0000
TGF2965-SM-EVB
DISTI # 772-TGF2965-SM-EVB		QorvoRF Development Tools
RoHS: Compliant		0
  • 1:$875.0000
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Availability
Stock:
215
On Order:
2198
Enter Quantity:
Current price of TGF2965-SM is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$45.00
$45.00
25
$40.00
$1 000.00
100
$35.00
$3 500.00
250
$32.00
$8 000.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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