TGF2941

TGF2941
Mfr. #:
TGF2941
Manufacturer:
Qorvo
Description:
RF JFET Transistors DC-25GHz 4Watt NF 1.3dB GaN
Lifecycle:
New from this manufacturer.
Datasheet:
TGF2941 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
TGF2941 more Information
Product Attribute
Attribute Value
Manufacturer:
Qorvo
Product Category:
RF JFET Transistors
RoHS:
Y
Transistor Type:
HEMT
Technology:
GaN SiC
Gain:
16 dB
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
-
Vgs - Gate-Source Breakdown Voltage:
-
Id - Continuous Drain Current:
290 mA
Output Power:
2.4 W
Maximum Drain Gate Voltage:
-
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 85 C
Pd - Power Dissipation:
5.1 W
Mounting Style:
SMD/SMT
Packaging:
Gel Pack
Application:
Defense and Aerospace, Broadband Wireless
Configuration:
Single
Operating Frequency:
DC to 25 GHz
Series:
TGF
Brand:
Qorvo
Forward Transconductance - Min:
-
NF - Noise Figure:
1.3 dB
Product Type:
RF JFET Transistors
Factory Pack Quantity:
50
Subcategory:
Transistors
Part # Aliases:
1113821
Tags
TGF29, TGF2, TGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
Image Part # Description
TGF2929-HM

Mfr.#: TGF2929-HM

OMO.#: OMO-TGF2929-HM

RF JFET Transistors DC-3.5GHz 100W 28V Gain 17.4dB GaN
TGF2978-SM

Mfr.#: TGF2978-SM

OMO.#: OMO-TGF2978-SM

RF JFET Transistors 8-12GHz 20W GaN PAE 50% Gain 11dB
TGF2018

Mfr.#: TGF2018

OMO.#: OMO-TGF2018

RF JFET Transistors DC-20GHz Gain 14dB NF 1dB P1dB 22dBm
TGF50-07870787-039

Mfr.#: TGF50-07870787-039

OMO.#: OMO-TGF50-07870787-039

Thermal Interface Products 5W/m-K 200*200*1 TGF50 White
TGF10-07870787-020

Mfr.#: TGF10-07870787-020

OMO.#: OMO-TGF10-07870787-020

Thermal Interface Products 1W/m-K 200*200*0.5 TGF10 White Gray
TGF2040

Mfr.#: TGF2040

OMO.#: OMO-TGF2040-318

RF JFET Transistors DC-20GHz NF 1.1dB Gain 13dB P1dB 26dBm
TGF2957

Mfr.#: TGF2957

OMO.#: OMO-TGF2957-318

RF JFET Transistors DC-12GHz 70W 32V GaN P3dB @ 3GHz 48.6dBm
TGF2023-05

Mfr.#: TGF2023-05

OMO.#: OMO-TGF2023-05-1152

RF JFET Transistors 5.0mm GaN Discrete
TGF2023-2-0150PCS

Mfr.#: TGF2023-2-0150PCS

OMO.#: OMO-TGF2023-2-0150PCS-1190

New and Original
TGF-12B09-01SA

Mfr.#: TGF-12B09-01SA

OMO.#: OMO-TGF-12B09-01SA-1190

MIL-C-38999 SERIES III SCOOP PROOF THREADED - Bulk (Alt: TGF-12B09-01SA)
Availability
Stock:
Available
On Order:
1000
Enter Quantity:
Current price of TGF2941 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
50
$23.73
$1 186.50
100
$20.97
$2 097.00
250
$19.50
$4 875.00
500
$18.14
$9 070.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Start with
Top