PSMN026-80YS,115

PSMN026-80YS,115
Mfr. #:
PSMN026-80YS,115
Manufacturer:
Nexperia
Description:
MOSFET N-CH 80V 27.5 mOhm Standard MOSFET
Lifecycle:
New from this manufacturer.
Datasheet:
PSMN026-80YS,115 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
PSMN026-80YS,115 DatasheetPSMN026-80YS,115 Datasheet (P4-P6)PSMN026-80YS,115 Datasheet (P7-P9)PSMN026-80YS,115 Datasheet (P10-P12)PSMN026-80YS,115 Datasheet (P13-P15)
ECAD Model:
More Information:
PSMN026-80YS,115 more Information
Product Attribute
Attribute Value
Manufacturer:
Nexperia
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
LFPAK56-5
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
80 V
Id - Continuous Drain Current:
34 A
Rds On - Drain-Source Resistance:
27.5 mOhms
Pd - Power Dissipation:
74 W
Configuration:
Single
Packaging:
Reel
Transistor Type:
1 N-Channel
Brand:
Nexperia
Fall Time:
5 ns
Product Type:
MOSFET
Rise Time:
6 ns
Factory Pack Quantity:
1500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
26 ns
Typical Turn-On Delay Time:
15 ns
Unit Weight:
0.003178 oz
Tags
PSMN026, PSMN02, PSMN0, PSMN, PSM
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***th Star Micro
Transistor MOSFET N-CH 80V 34A 5-Pin (4+Tab) LFPAK T/R
***Components
PSMN026-80YS,115 N-Channel MOSFET, 34 A, 80 V, 4-Pin SOT-669 Nexperia
***peria
PSMN026-80YS - N-channel LFPAK 80 V 27.5 mΩ standard level MOSFET
***ure Electronics
PSMN026 Series 80 V 27.5 mOhm 20 nC N-Channel Standard Level MOSFET - SOT-669
***ical
Trans MOSFET N-CH 80V 34A 5-Pin (4+Tab) LFPAK T/R
***et
Trans MOSFET N-CH 80V 34A 5-Pin(4+Tab) LFPAK T/R
***i-Key
MOSFET N-CH 80V 34A LFPAK
***ment14 APAC
MOSFET, N CH, 80V, 34A, 4-SOT-669; Transistor Polarity:N Channel; Continuous Drain Current Id:34A; Drain Source Voltage Vds:80V; On Resistance Rds(on):20mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V
***ark
Mosfet, N Ch, 80V, 34A, 4-Sot-669; Transistor Polarity:n Channel; Continuous Drain Current Id:34A; Drain Source Voltage Vds:80V; On Resistance Rds(On):0.02Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; No. Of Pins:4Pinsrohs Compliant: Yes
***nell
MOSFET, CANALE N, 80V, 34A, SOT669; Polarità Transistor:Canale N; Corrente Continua di Drain Id:34A; Tensione Drain Source Vds:80V; Resistenza di Attivazione Rds(on):0.02ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:74W; Modello Case Transistor:SOT-669; No. di Pin:4Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Corrente Id Max:34A; Intervallo Temperatura di Esercizio:Da -55°C a +175°C; Temperatura di Esercizio Min:-55°C; Tensione Vgs Max:20V
PSMN N-Channel MOSFETs
Nexperia PSMN N-Channel MOSFETs include standard and logic level, regular and enhancement mode, N-Channel MOSFETs in LFPAK, I2PAK, TO-220, and DFN3333-8 packages qualified to 150°C or 175°C. These Nexperia PSMN N-Channel MOSFETs are designed and qualified for use in a wide range of industrial, communications, and domestic equipment. The Nexperia logic level enhancement mode N-Channel MOSFETs in LFPAK packages feature ultra low QG, QGD, and QOSS for high system efficiencies at low and high loads, and ultra low RDS(on) and low parasitic inductance. They are also optimized for 4.5V gate drive utilizing NextPower Superjunction technology. The Nexperia standard and logic level N-Channel MOSFETs in I2PAK and TO-220 packages feature high efficiency due to low switching and conduction losses and are suitable for standard or logic level gate drive sources.
Part # Mfg. Description Stock Price
PSMN026-80YS,115
DISTI # V72:2272_06540803
NexperiaPSMN026-80YS/SOT669/LFPAK4500
  • 3000:$0.2217
  • 1000:$0.2463
  • 500:$0.2579
  • 250:$0.2864
  • 100:$0.3184
  • 25:$0.5061
  • 10:$0.5709
  • 1:$0.6934
PSMN026-80YS,115
DISTI # V36:1790_06540803
NexperiaPSMN026-80YS/SOT669/LFPAK0
    PSMN026-80YS,115
    DISTI # 1727-4278-1-ND
    NexperiaMOSFET N-CH 80V 34A LFPAK
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    1316In Stock
    • 500:$0.3289
    • 100:$0.4185
    • 10:$0.5610
    • 1:$0.6500
    PSMN026-80YS,115
    DISTI # 1727-4278-6-ND
    NexperiaMOSFET N-CH 80V 34A LFPAK
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    1316In Stock
    • 500:$0.3289
    • 100:$0.4185
    • 10:$0.5610
    • 1:$0.6500
    PSMN026-80YS,115
    DISTI # 1727-4278-2-ND
    NexperiaMOSFET N-CH 80V 34A LFPAK
    RoHS: Compliant
    Min Qty: 1500
    Container: Tape & Reel (TR)
    On Order
    • 10500:$0.2033
    • 7500:$0.2105
    • 3000:$0.2251
    • 1500:$0.2468
    PSMN026-80YS,115
    DISTI # 33635034
    NexperiaPSMN026-80YS/SOT669/LFPAK4500
    • 3000:$0.2217
    • 1000:$0.2463
    • 500:$0.2579
    • 250:$0.2864
    • 100:$0.3184
    • 35:$0.4671
    PSMN026-80YS,115
    DISTI # PSMN026-80YS,115
    NexperiaTrans MOSFET N-CH 80V 34A 5-Pin(4+Tab) LFPAK T/R - Tape and Reel (Alt: PSMN026-80YS,115)
    RoHS: Compliant
    Min Qty: 1500
    Container: Reel
    Americas - 0
    • 15000:$0.1739
    • 9000:$0.1789
    • 6000:$0.1829
    • 3000:$0.1879
    • 1500:$0.1909
    PSMN026-80YS,115
    DISTI # 62R9333
    NexperiaMOSFET Transistor, N Channel, 34 A, 80 V, 20 mohm, 10 V, 3 V RoHS Compliant: Yes625
    • 1000:$0.2490
    • 500:$0.2740
    • 250:$0.2990
    • 100:$0.3230
    • 50:$0.3920
    • 25:$0.4610
    • 10:$0.5300
    • 1:$0.6460
    PSMN026-80YS,115.
    DISTI # 26AC3081
    NexperiaMOSFET, N CH, 80V, 34A, 4-SOT-669,Transistor Polarity:N Channel,Continuous Drain Current Id:34A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.02ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,No. of Pins:4PinsRoHS Compliant: Yes0
    • 15000:$0.1740
    • 9000:$0.1790
    • 6000:$0.1830
    • 3000:$0.1880
    • 1:$0.1910
    PSMN026-80YS,115
    DISTI # 771-PSMN026-80YS,115
    NexperiaMOSFET N-CH 80V 27.5 mOhm Standard MOSFET
    RoHS: Compliant
    5907
    • 1:$0.6400
    • 10:$0.5250
    • 100:$0.3200
    • 1000:$0.2470
    PSMN026-80YS,115
    DISTI # 7982861P
    NexperiaTRENCH MOSFET N-CHANNEL 80V 34A SOT669, RL30
    • 500:£0.2190
    • 200:£0.2390
    • 50:£0.2710
    PSMN026-80YS.115
    DISTI # PSMN026-80YS.115
    NexperiaTransistor: N-MOSFET,unipolar,80V,34A,74W,SOT669161
    • 500:$0.3100
    • 100:$0.3300
    • 25:$0.3600
    • 5:$0.4600
    • 1:$0.6300
    PSMN026-80YS,115
    DISTI # 1785645
    NexperiaMOSFET, N CH, 80V, 34A, SOT669
    RoHS: Compliant
    625
    • 1000:$0.3490
    • 500:$0.3640
    • 250:$0.3890
    • 100:$0.4700
    • 25:$0.5630
    • 10:$0.7770
    • 1:$0.9010
    PSMN026-80YS,115
    DISTI # 1785645RL
    NexperiaMOSFET, N CH, 80V, 34A, SOT669
    RoHS: Compliant
    0
    • 1000:$0.3490
    • 500:$0.3640
    • 250:$0.3890
    • 100:$0.4700
    • 25:$0.5630
    • 10:$0.7770
    • 1:$0.9010
    PSMN026-80YS,115
    DISTI # 1785645
    NexperiaMOSFET, N CH, 80V, 34A, SOT669
    RoHS: Compliant
    930
    • 500:£0.2180
    • 250:£0.2370
    • 100:£0.2570
    • 25:£0.4420
    • 5:£0.4760
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    Availability
    Stock:
    Available
    On Order:
    1989
    Enter Quantity:
    Current price of PSMN026-80YS,115 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $0.64
    $0.64
    10
    $0.52
    $5.25
    100
    $0.32
    $32.00
    1000
    $0.25
    $247.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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