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BSC057N08NS3GATMA1

BSC057N08NS3GATMA1
Mfr. #:
BSC057N08NS3GATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3
Lifecycle:
New from this manufacturer.
Datasheet:
BSC057N08NS3GATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
PG-TDSON-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
80 V
Id - Continuous Drain Current:
100 A
Rds On - Drain-Source Resistance:
5.7 mOhms
Vgs th - Gate-Source Threshold Voltage:
2 V
Vgs - Gate-Source Voltage:
10 V
Qg - Gate Charge:
42 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
114 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Reel
Height:
1.27 mm
Length:
5.9 mm
Transistor Type:
1 N-Channel
Width:
5.15 mm
Brand:
Infineon Technologies
Forward Transconductance - Min:
40 S
Development Kit:
EVAL_1K4W_ZVS_FB_CFD7
Fall Time:
9 ns
Product Type:
MOSFET
Rise Time:
14 ns
Factory Pack Quantity:
5000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
32 ns
Typical Turn-On Delay Time:
16 ns
Part # Aliases:
BSC057N08NS3 BSC57N8NS3GXT G SP000447542
Unit Weight:
0.003527 oz
Tags
BSC057N08NS3, BSC057N08, BSC057, BSC05, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET Transistor, N Channel, 100 A, 80 V, 0.0047 ohm, 10 V, 2.8 V
***ure Electronics
Single N-Channel 80 V 11 mOhm 56 nC OptiMOS™ Power Mosfet - TDSON-8
***ineon
OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). | Summary of Features: Optimized technology for DC-DC converters; Excellent gate charge x R DS(ON) product (FOM); Superior thermal resistance; Dual sided cooling; Low parasitic inductance; Low profile (<0,7mm); N-channel, normal level; 100% avalanche tested; Pb-free plating; RoHS compliant | Target Applications: Solar; Consumer; Telecom; Server; PC power; DC-DC; AC-DC; Adapter; SMPS; LED; Motor control
Part # Mfg. Description Stock Price
BSC057N08NS3GATMA1
DISTI # BSC057N08NS3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 80V 100A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$0.9314
BSC057N08NS3GATMA1
DISTI # BSC057N08NS3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 80V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$1.0700
  • 500:$1.2914
  • 100:$1.6603
  • 10:$2.0660
  • 1:$2.2900
BSC057N08NS3GATMA1
DISTI # BSC057N08NS3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 80V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$1.0700
  • 500:$1.2914
  • 100:$1.6603
  • 10:$2.0660
  • 1:$2.2900
BSC057N08NS3GATMA1
DISTI # BSC057N08NS3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 80V 16A 8-Pin TDSON EP - Tape and Reel (Alt: BSC057N08NS3GATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.7499
  • 10000:$0.7229
  • 20000:$0.6969
  • 30000:$0.6739
  • 50000:$0.6619
BSC057N08NS3GATMA1
DISTI # 79X1332		Infineon Technologies AGMOSFET, N-CH, 80V, 100A, PG-TDSON- 8,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0047ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V RoHS Compliant: Yes0
  • 1:$1.9200
  • 10:$1.6300
  • 25:$1.5200
  • 50:$1.4200
  • 100:$1.3100
  • 250:$1.2300
  • 500:$1.1400
  • 1000:$0.9450
BSC057N08NS3 G
DISTI # 726-BSC057N08NS3G		Infineon Technologies AGMOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3
RoHS: Compliant		0
  • 1:$1.9200
  • 10:$1.6300
  • 100:$1.3100
  • 500:$1.1400
  • 1000:$0.9450
BSC057N08NS3GATMA1
DISTI # 726-BSC057N08NS3GATM		Infineon Technologies AGMOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3
RoHS: Compliant		0
  • 1:$1.9200
  • 10:$1.6300
  • 100:$1.3100
  • 500:$1.1400
  • 1000:$0.9450
BSC057N08NS3GATMA1
DISTI # 2432707		Infineon Technologies AGMOSFET, N CH, 80V, 100A, TDSON-8
RoHS: Compliant		0
  • 1:$3.0400
  • 10:$2.5900
  • 100:$2.0700
BSC057N08NS3GATMA1
DISTI # 2432707RL		Infineon Technologies AGMOSFET, N CH, 80V, 100A, TDSON-8
RoHS: Compliant		0
  • 1:$3.0400
  • 10:$2.5900
  • 100:$2.0700
BSC057N08NS3GATMA1
DISTI # 2432707		Infineon Technologies AGMOSFET, N CH, 80V, 100A, TDSON-8
RoHS: Compliant		0
  • 5:£1.7200
  • 25:£1.5800
  • 100:£1.2600
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Availability
Stock:
Available
On Order:
1989
Enter Quantity:
Current price of BSC057N08NS3GATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.91
$1.91
10
$1.62
$16.20
100
$1.30
$130.00
500
$1.14
$570.00
1000
$0.94
$945.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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