OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

FDP8D5N10C

FDP8D5N10C
Mfr. #:
FDP8D5N10C
Manufacturer:
ON Semiconductor
Description:
MOSFET FET 100V 76A 8.5 mOhm
Lifecycle:
New from this manufacturer.
Datasheet:
FDP8D5N10C Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
100 V
Id - Continuous Drain Current:
76 A
Rds On - Drain-Source Resistance:
8.5 mOhms
Vgs th - Gate-Source Threshold Voltage:
2 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
34 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
107 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Brand:
ON Semiconductor
Forward Transconductance - Min:
68 S
Fall Time:
4 ns
Product Type:
MOSFET
Rise Time:
11 ns
Factory Pack Quantity:
800
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
18 ns
Typical Turn-On Delay Time:
12 ns
Tags
FDP8, FDP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Japan
Transistor MOSFET N-CH 100V 76A 3-Pin TO-220 T/R
***emi
N-Channel PowerTrench® MOSFET, Shielded Gate, 100V, 76A, 8.5mΩ N-Channel Shielded Gate PowerTrench® MOSFET, 100V, 76A, 8.5mΩ
*** Stop Electro
Power Field-Effect Transistor, 76A I(D), 100V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Part # Mfg. Description Stock Price
FDP8D5N10C
DISTI # V99:2348_21690361		ON SemiconductorFET ENGR DEV-NOT REL730
  • 250:$2.5430
  • 100:$2.7050
  • 10:$3.1420
  • 1:$4.1074
FDP8D5N10C
DISTI # V36:1790_21690361		ON SemiconductorFET ENGR DEV-NOT REL0
    FDP8D5N10C
    DISTI # FDP8D5N10C-ND    		ON SemiconductorFET ENGR DEV-NOT REL
    RoHS: Not compliant
    Min Qty: 800
    Container: Tube    		Temporarily Out of Stock
    • 800:$2.4784
    FDP8D5N10C
    DISTI # 32434297    		ON SemiconductorFET ENGR DEV-NOT REL2400
    • 800:$2.6037
    FDP8D5N10C
    DISTI # 31442392    		ON SemiconductorFET ENGR DEV-NOT REL730
    • 500:$2.4306
    • 250:$2.7337
    • 100:$2.9079
    • 10:$3.3777
    • 4:$4.4155
    FDP8D5N10C
    DISTI # FDP8D5N10C    		ON SemiconductorShielded Gate PowerTrench MOSFET N-Channel 100V 76A 8.5m Ohm 3-Pin TO-220 Tube - Rail/Tube (Alt: FDP8D5N10C)
    RoHS: Compliant
    Min Qty: 800
    Container: Tube    		Americas - 0
    • 4800:$1.6900
    • 8000:$1.6900
    • 800:$1.7900
    • 1600:$1.7900
    • 3200:$1.7900
    FDP8D5N10C
    DISTI # 65AC4708    		ON SemiconductorFDP8D5N10C0
    • 500:$1.8500
    • 250:$1.9100
    • 100:$2.2800
    • 50:$2.6300
    • 25:$2.8100
    • 10:$3.2000
    • 1:$3.7000
    FDP8D5N10C
    DISTI # 863-FDP8D5N10C    		ON SemiconductorMOSFET FET 100V 76A 8.5 mOhm
    RoHS: Compliant    		349
    • 1:$3.7600
    • 10:$3.1900
    • 100:$2.7700
    • 250:$2.6300
    • 500:$2.3600
    • 1000:$1.9900
    • 2500:$1.8900
    FDP8D5N10C
    DISTI # 1811860    		ON SemiconductorFET 100V 8.5 MOHM, TU800
    • 1600:£1.6080
    • 800:£1.7430
    Image Part # Description
    AT24CM02-SSHD-T

    Mfr.#: AT24CM02-SSHD-T

    OMO.#: OMO-AT24CM02-SSHD-T

    		 EEPROM 2.5-5.5V, 1MHz, Ind Tmp, 8-SOIC-N
    SIHG47N60AEF-GE3

    Mfr.#: SIHG47N60AEF-GE3

    OMO.#: OMO-SIHG47N60AEF-GE3

    		 MOSFET 600V Vds 30V Vgs TO-247AC
    RB168MM150TFTR

    Mfr.#: RB168MM150TFTR

    OMO.#: OMO-RB168MM150TFTR

    		 Schottky Diodes & Rectifiers 150V VR 1A 0.84V VF PMDU; SOD-123FL
    V30100CI-M3/P

    Mfr.#: V30100CI-M3/P

    OMO.#: OMO-V30100CI-M3-P

    		 Schottky Diodes & Rectifiers 100V 30A TO-220AB TMBS
    SRP2313AA-220M

    Mfr.#: SRP2313AA-220M

    OMO.#: OMO-SRP2313AA-220M

    		 Fixed Inductors 22uH 20% 18A AEC-Q200
    PA-T2X-38E

    Mfr.#: PA-T2X-38E

    OMO.#: OMO-PA-T2X-38E

    		 Heat Sinks 38mm Heatsink Anodized
    SRP2313AA-100M

    Mfr.#: SRP2313AA-100M

    OMO.#: OMO-SRP2313AA-100M

    		 Fixed Inductors 10uH 20% 30A AEC-Q200
    VS-8TQ100-M3

    Mfr.#: VS-8TQ100-M3

    OMO.#: OMO-VS-8TQ100-M3-VISHAY

    		 DIODE SCHOTTKY 100V 8A TO220AC
    RB168MM150TFTR

    Mfr.#: RB168MM150TFTR

    OMO.#: OMO-RB168MM150TFTR-ROHM-SEMI

    		 RB168MM150TF IS THE HIGH RELIABI
    AT24CM02-SSHD-T

    Mfr.#: AT24CM02-SSHD-T

    OMO.#: OMO-AT24CM02-SSHD-T-MICROCHIP-TECHNOLOGY

    		 IC EEPROM 2M I2C 1MHZ 8SOIC
    Availability
    Stock:
    349
    On Order:
    2332
    Enter Quantity:
    Current price of FDP8D5N10C is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $3.76
    $3.76
    10
    $3.19
    $31.90
    100
    $2.77
    $277.00
    250
    $2.63
    $657.50
    500
    $2.36
    $1 180.00
    1000
    $1.99
    $1 990.00
    2500
    $1.89
    $4 725.00
    5000
    $1.82
    $9 100.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
    Start with
    Top