QPD2793

QPD2793
Mfr. #:
QPD2793
Manufacturer:
Qorvo
Description:
RF JFET Transistors 2.62-2.69GHz GaN 200W 48V
Lifecycle:
New from this manufacturer.
Datasheet:
QPD2793 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
QPD2793 more Information
Product Attribute
Attribute Value
Manufacturer:
Qorvo
Product Category:
RF JFET Transistors
RoHS:
Y
Transistor Type:
HEMT
Technology:
GaN SiC
Gain:
19 dB
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
-
Vgs - Gate-Source Breakdown Voltage:
-
Id - Continuous Drain Current:
-
Output Power:
200 W
Maximum Drain Gate Voltage:
-
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
-
Pd - Power Dissipation:
-
Mounting Style:
SMD/SMT
Package / Case:
NI400-2
Packaging:
Tray
Application:
Microcell Base Station, W-CDMA / LTE
Configuration:
Single
Operating Frequency:
2.62 GHz to 2.69 GHz
Series:
QPD
Brand:
Qorvo
Forward Transconductance - Min:
-
Product Type:
RF JFET Transistors
Factory Pack Quantity:
500
Subcategory:
Transistors
Part # Aliases:
1130771
Tags
QPD279, QPD27, QPD2, QPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
Part # Mfg. Description Stock Price
QPD2793
DISTI # 772-QPD2793
QorvoRF JFET Transistors 2.62-2.69GHz GaN 200W 48V
RoHS: Compliant
0
  • 500:$81.1200
Image Part # Description
QPD1011SR

Mfr.#: QPD1011SR

OMO.#: OMO-QPD1011SR

RF JFET Transistors .03-1.2GHz 7W 50V GaN
QPD1000PCB4B01

Mfr.#: QPD1000PCB4B01

OMO.#: OMO-QPD1000PCB4B01-1152

RF Development Tools QPD1000 50-1000MHz Eval Board
QPD5223

Mfr.#: QPD5223

OMO.#: OMO-QPD5223-ON-SEMICONDUCTOR

EMITTER-PHOTOSENSOR PAIR 5MM
QPD W 4PE1 5 9-14 M25 FC B

Mfr.#: QPD W 4PE1 5 9-14 M25 FC B

OMO.#: OMO-QPD-W-4PE1-5-9-14-M25-FC-B-1190

Panel feed-through, QUICKON connection, No. of pos.: 4+PE, 0.5 mm² . 1.5 mm², 690 V, 17.5 A, black, With
QPDD10-48D15

Mfr.#: QPDD10-48D15

OMO.#: OMO-QPDD10-48D15-QUALTEK

Switching Power Supplies 15V 0.33A 10W DCDC DUAL OUTPUT
QPD-60-24

Mfr.#: QPD-60-24

OMO.#: OMO-QPD-60-24-QUALTEK

Switching Power Supplies 24V 2.5A 60W P/S SINGLE OUTPUT
QPD-60-5

Mfr.#: QPD-60-5

OMO.#: OMO-QPD-60-5-QUALTEK

Switching Power Supplies 5V 12A 60W P/S SINGLE OUTPUT
QPD-25-15

Mfr.#: QPD-25-15

OMO.#: OMO-QPD-25-15-QUALTEK

Switching Power Supplies 15V 1.7A 25W P/S SINGLE OUTPUT
QPDS15-48S15

Mfr.#: QPDS15-48S15

OMO.#: OMO-QPDS15-48S15-QUALTEK

Switching Power Supplies 15V 1A 15W DCDC SINGLE OUTPUT
QPDF-320-12

Mfr.#: QPDF-320-12

OMO.#: OMO-QPDF-320-12-QUALTEK

Switching Power Supplies 12V 25A 320W P/S SINGLE OUTPUT
Availability
Stock:
Available
On Order:
4000
Enter Quantity:
Current price of QPD2793 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
500
$81.12
$40 560.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Start with
Top