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TGF2955

TGF2955
Mfr. #:
TGF2955
Manufacturer:
Qorvo
Description:
RF JFET Transistors DC-12GHz 40W 32V GaN P3dB @ 3GHz 46.5dBm
Lifecycle:
New from this manufacturer.
Datasheet:
TGF2955 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
TGF2955 more Information
Product Attribute
Attribute Value
Manufacturer:
Qorvo
Product Category:
RF JFET Transistors
RoHS:
Y
Transistor Type:
pHEMT
Technology:
GaAs
Gain:
10.4 dB
Vds - Drain-Source Breakdown Voltage:
12 V
Vgs - Gate-Source Breakdown Voltage:
- 7 V
Id - Continuous Drain Current:
517 mA
Minimum Operating Temperature:
- 65 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
5.6 W
Mounting Style:
SMD/SMT
Packaging:
Gel Pack
Configuration:
Dual
Operating Frequency:
20 GHz
Operating Temperature Range:
- 65 C to + 150 C
Product:
RF JFET
Type:
GaAs pHEMT
Brand:
Qorvo
Forward Transconductance - Min:
619 mS
Number of Channels:
2 Channel
P1dB - Compression Point:
32.5 dBm
Product Type:
RF JFET Transistors
Factory Pack Quantity:
100
Subcategory:
Transistors
Part # Aliases:
1098617
Tags
TGF295, TGF29, TGF2, TGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, DC to 12 GHz, 40 W, 19.2 dB, 32 V, GaN, DIE
TGF GaN on SiC Transistors
Qorvo TGF GaN on SiC Transistors for the Satellite, P to P, and Military communications along with Marine radar and Test and instrumentation. These are small footprint (dies) that handle high power (7W to 70W) and high frequency, up to 14GHz.
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
Part # Mfg. Description Stock Price
TGF2955
DISTI # 772-TGF2955		QorvoRF JFET Transistors DC-12GHz 40W 32V GaN P3dB @ 3GHz 46.5dBm
RoHS: Compliant		3
  • 1:$75.1500
  • 25:$65.7600
  • 100:$57.5500
1112260
DISTI # TGF2955		QorvoRF POWER TRANSISTOR
RoHS: Compliant		0
  • 1:$33.0700
Image Part # Description
52559-0652

Mfr.#: 52559-0652

OMO.#: OMO-52559-0652-687

 FFC & FPC Connectors 0.5 FPC ZIF SMT ST 6 T ST 6Ckt EmbsTp Pkg
15166-0053

Mfr.#: 15166-0053

OMO.#: OMO-15166-0053-488

 FFC / FPC Jumper Cables FFC 0.50 Type A 6 ckts lgt 51
Availability
Stock:
Available
On Order:
5500
Enter Quantity:
Current price of TGF2955 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
50
$65.76
$3 288.00
100
$57.55
$5 755.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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