PartNumber | IPP320N20N3 G | IPP320N20N3G 320N20N | IPP320N20N3G , 2SD968A-S |
Description | MOSFET N-Ch 200V 34A TO220-3 OptiMOS 3 | ||
Manufacturer | Infineon | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | Through Hole | - | - |
Package / Case | TO-220-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 200 V | - | - |
Id Continuous Drain Current | 34 A | - | - |
Rds On Drain Source Resistance | 28 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 2 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 29 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Pd Power Dissipation | 136 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Tradename | OptiMOS | - | - |
Packaging | Tube | - | - |
Height | 15.65 mm | - | - |
Length | 10 mm | - | - |
Series | OptiMOS 3 | - | - |
Transistor Type | 1 N-Channel | - | - |
Type | OptiMOS 3 Power-Transistor | - | - |
Width | 4.4 mm | - | - |
Brand | Infineon Technologies | - | - |
Forward Transconductance Min | 27 S | - | - |
Fall Time | 4 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 9 ns | - | - |
Factory Pack Quantity | 500 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 21 ns | - | - |
Typical Turn On Delay Time | 11 ns | - | - |
Part # Aliases | IPP320N20N3GXKSA1 IPP32N2N3GXK SP000677842 | - | - |
Unit Weight | 0.211644 oz | - | - |