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Bipolar (BJT) Transistor PNP 60V 8A 50W Through Hole TO-220AB.

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Collector;connected to mounting base. 3. Base. Absolute maximum ratings (Ta= 25 ). SYMBOL. PARAMETER. CONDITIONS. VALUE. UNIT. BD534. -45. bd536.

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BD 536. Product Description; Technical information. General. Type; Power transistor. Design; Kleinleistungstransistor (GP BJT). Technology; PNP. Housing; TO- ...

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bd536 Complementary Silicon Power Transistors . DESCRIPTION The BD533, BD535, and BD537 are silicon Epitaxial-Base NPN power transistors in Jedec ...

BD534/536/538 PNP Epitaxial Silicon Transistor

Pulse Test: PW =300µs, duty Cycle =1.5% Pulsed. Symbol. Parameter. Value. Units. VCBO. Collector-Base Voltage. : BD534. : bd536. : BD538. - 45. - 60. - 80. V.

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Features, Values, Unit. Type, PNP. Maximum Power Dissipation, 50000, mW. Maximum Operating Temperature, 150, °C. Maximum Emitter Base Voltage, 5, V.

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BD536 ST(SGS) 3P/TO-220 - Centenary Materials Co., Ltd - 勝特力

Description, PNP Transistor. Pins/Package, 3P/TO-220. Pol, PNP. Ic(max), 8A. Pt( Pd), 50W. Vceo(max), 60V. hfe(min.-max.) 20-25. Marking, bd536. Weight, 1.9 ...

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バイポーラ（BJT）トランジスタ PNP 60V 8A 50W スルーホール TO-220AB.

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