PartNumber | BD239C | BD239C-S | BD239C. |
Description | Bipolar Transistors - BJT NPN Si Transistor Epitaxial | TRANS NPN 100V 2A | |
Manufacturer | ON Semiconductor | - | - |
Product Category | Bipolar Transistors - BJT | - | - |
RoHS | Y | - | - |
Mounting Style | Through Hole | - | - |
Package / Case | TO-220-3 | - | - |
Transistor Polarity | NPN | - | - |
Configuration | Single | - | - |
Collector Emitter Voltage VCEO Max | 100 V | - | - |
Collector Base Voltage VCBO | 115 V | - | - |
Emitter Base Voltage VEBO | 5 V | - | - |
Collector Emitter Saturation Voltage | 0.7 V | - | - |
Maximum DC Collector Current | 2 A | - | - |
Minimum Operating Temperature | - 65 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Series | BD239C | - | - |
Height | 9.4 mm | - | - |
Length | 10.1 mm | - | - |
Packaging | Bulk | - | - |
Width | 4.7 mm | - | - |
Brand | ON Semiconductor / Fairchild | - | - |
Continuous Collector Current | 2 A | - | - |
DC Collector/Base Gain hfe Min | 15 | - | - |
Pd Power Dissipation | 30 W | - | - |
Product Type | BJTs - Bipolar Transistors | - | - |
Factory Pack Quantity | 1200 | - | - |
Subcategory | Transistors | - | - |
Unit Weight | 0.063493 oz | - | - |