PartNumber | NXP3875GR | NXP3875YR | NXP3875YVL |
Description | Bipolar Transistors - BJT 50V 150 mA NPN gnrl purpose transistors | Bipolar Transistors - BJT 51V 150 mA NPN gnrl purpose transistors | Bipolar Transistors - BJT NXP3875Y/TO-236AB/REEL 11" Q3/ |
Manufacturer | Nexperia | Nexperia | Nexperia |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y | Y |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-236AB-3 | TO-236AB-3 | SOT-23-3 |
Transistor Polarity | NPN | NPN | - |
Configuration | Single | Single | - |
Collector Emitter Voltage VCEO Max | 50 V | 50 V | - |
Collector Base Voltage VCBO | 60 V | 60 V | - |
Emitter Base Voltage VEBO | 5 V | 5 V | - |
Collector Emitter Saturation Voltage | 250 mV | 250 mV | - |
Maximum DC Collector Current | 150 mA | 150 mA | - |
Gain Bandwidth Product fT | 80 MHz | 80 MHz | - |
Minimum Operating Temperature | - 65 C | - 65 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
DC Current Gain hFE Max | 400 | 240 | - |
Packaging | Reel | Reel | Reel |
Brand | Nexperia | Nexperia | Nexperia |
Continuous Collector Current | 200 mA | 200 mA | - |
DC Collector/Base Gain hfe Min | 120 | 200 | - |
Pd Power Dissipation | 200 mW | 200 mW | - |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Factory Pack Quantity | 3000 | 3000 | 10000 |
Subcategory | Transistors | Transistors | Transistors |