STW42N60M2-EP

STW42N60M2-EP vs STW42N60M2EP

 
PartNumberSTW42N60M2-EPSTW42N60M2EP
DescriptionMOSFET N-channel 600 V, 0.076 Ohm typ., 34 A MDmesh M2 EP Power MOSFET in a TO-247 packagePower Field-Effect Transisto
ManufacturerSTMicroelectronics-
Product CategoryMOSFET-
RoHSY-
TechnologySi-
Mounting StyleThrough Hole-
Package / CaseTO-247-3-
Number of Channels1 Channel-
Transistor PolarityN-Channel-
Vds Drain Source Breakdown Voltage600 V-
Id Continuous Drain Current34 A-
Rds On Drain Source Resistance87 mOhms-
Vgs th Gate Source Threshold Voltage2 V-
Vgs Gate Source Voltage25 V-
Qg Gate Charge55 nC-
Minimum Operating Temperature- 55 C-
Maximum Operating Temperature+ 150 C-
Pd Power Dissipation250 W-
ConfigurationSingle-
Channel ModeEnhancement-
TradenameMDmesh-
SeriesSTW42N60M2-EP-
BrandSTMicroelectronics-
Fall Time8 ns-
Product TypeMOSFET-
Rise Time9.5 ns-
Factory Pack Quantity600-
SubcategoryMOSFETs-
Typical Turn Off Delay Time96.5 ns-
Typical Turn On Delay Time16.5 ns-
Unit Weight1.340411 oz-
Manufacturer Part # Description RFQ
STMicroelectronics
STMicroelectronics
STW42N60M2-EP MOSFET N-channel 600 V, 0.076 Ohm typ., 34 A MDmesh M2 EP Power MOSFET in a TO-247 package
STW42N60M2-EP MOSFET N-CH 600V 34A EP TO247
STW42N60M2EP Power Field-Effect Transisto
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