Silicon Carbide Transistor advantages include low switching losses, higher efficiency, high temperature operation and high short circuit withstand capability.
By GeneSiC Semiconductor 214
Features superior surge current capability, positive temperature coefficient of Vf, superior figure of merit Qc/If and much more.
By GeneSiC Semiconductor 154
GeneSiC is offering and continuously improving innovative Silicon Carbide power rectifiers for high voltage rating applications, with significant advantages.
By GeneSiC Semiconductor 135
Silicon Carbide Power Schottky Diode feature superior surge current capability and positive temperature coefficient of Vf.
By GeneSiC Semiconductor 132
MBR40044CT, 400 A Schottky diode features high surge capability and types up to 100 V VRRM.
By GeneSiC Semiconductor 206
MBR60040CT, 600 A silicon power schottky diode features high surge capability and types up to 100 V VRRM.
By GeneSiC Semiconductor 205
1N3214 features high surge capability and types up to 600 V VRRM.
By GeneSiC Semiconductor 191