SISS26DN-T1-GE3

Name: Vishay - SISS26DN-T1-GE3
Brand: Vishay
SKU: OMO-4078107
Price: 1.00 USD
Availability: InStock
Rating: 4.9 (1 reviews)

Mfr. #:: SISS26DN-T1-GE3
Manufacturer:: Vishay
Description:: MOSFET N-CHANNEL 60V 60A 1212-8S
Lifecycle:: New from this manufacturer.
Datasheet:: SISS26DN-T1-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: SISS26DN-T1-GE3 more Information

Product Attribute
Attribute Value

Tags: SISS2, SISS, SIS

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

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Vacuum Packaging with PL

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SISS26DN-T1-GE3 Description

***ical: Trans MOSFET N-CH 60V 60A 8-Pin PowerPAK 1212-S T/R

***mal: N-Channel 60 V (D-S) MOSFET

***ark: Mosfet, N-Ch, 60V, 60A, 150Deg C, 57W; Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:60A; On Resistance Rds(On):0.0037Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes

SISS26DN-T1-GE3 More Information

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

TrenchFET Gen IV MOSFETs: Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.

Market price

Part #	Mfg.	Description	Stock	Price
SISS26DN-T1-GE3 DISTI # V72:2272_22521042	Vishay Intertechnologies	N-Channel 60 V (D-S) Mosfet	0
SISS26DN-T1-GE3 DISTI # V36:1790_22521042	Vishay Intertechnologies	N-Channel 60 V (D-S) Mosfet	0	6000000:$0.6627 3000000:$0.6628 600000:$0.6694 60000:$0.6789 6000:$0.6804
SISS26DN-T1-GE3 DISTI # SISS26DN-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CHANNEL 60V 60A 1212-8S Min Qty: 1 Container: Cut Tape (CT)	13092In Stock	1000:$0.7258 500:$0.8760 100:$1.0662 10:$1.3270 1:$1.4800
SISS26DN-T1-GE3 DISTI # SISS26DN-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CHANNEL 60V 60A 1212-8S Min Qty: 1 Container: Digi-Reel®	13092In Stock	1000:$0.7258 500:$0.8760 100:$1.0662 10:$1.3270 1:$1.4800
SISS26DN-T1-GE3 DISTI # SISS26DN-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CHANNEL 60V 60A 1212-8S Min Qty: 3000 Container: Tape & Reel (TR)	12000In Stock	6000:$0.6464 3000:$0.6804
SISS26DN-T1-GE3 DISTI # SISS26DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 60V 23.3A 8-Pin PowerPAK 1212 - Tape and Reel (Alt: SISS26DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.6229 18000:$0.6399 12000:$0.6579 6000:$0.6859 3000:$0.7069
SISS26DN-T1-GE3 DISTI # SISS26DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 60V 23.3A 8-Pin PowerPAK 1212 (Alt: SISS26DN-T1-GE3) Min Qty: 1	Europe - 0
SISS26DN-T1-GE3 DISTI # 59AC7455	Vishay Intertechnologies	N-CHANNEL 60-V (D-S) MOSFET RoHS: Not Compliant	0	10000:$0.6180 6000:$0.6320 4000:$0.6570 2000:$0.7290 1000:$0.8020 1:$0.8360
SISS26DN-T1-GE3 DISTI # 37AC0920	Vishay Intertechnologies	MOSFET, N-CH, 60V, 60A, POWERPAK 1212,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0037ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.6V,Power RoHS Compliant: Yes RoHS: Compliant	1920	500:$0.9230 250:$0.9970 100:$1.0700 50:$1.1800 25:$1.2800 10:$1.3900 1:$1.6900
SISS26DN-T1-GE3 DISTI # 78-SISS26DN-T1-GE3	Vishay Intertechnologies	MOSFET 60V Vds 20V Vgs PowerPAK 1212-8S RoHS: Compliant	14562	1:$1.5500 10:$1.3900 100:$1.0900 500:$0.9230 1000:$0.7430 3000:$0.6800 6000:$0.6460 9000:$0.6220
SISS26DN-T1-GE3 DISTI # 2785453RL	Vishay Intertechnologies	MOSFET, N-CH, 60V, 60A, POWERPAK 1212 RoHS: Compliant	0	1000:£0.7500 500:£0.7530 250:£0.8130 100:£0.8730 10:£1.1900 1:£1.5400
SISS26DN-T1-GE3 DISTI # 2785453	Vishay Intertechnologies	MOSFET, N-CH, 60V, 60A, POWERPAK 1212 RoHS: Compliant	3176	1000:£0.7500 500:£0.7530 250:£0.8130 100:£0.8730 10:£1.1900 1:£1.5400
SISS26DN-T1-GE3 DISTI # 2785453	Vishay Intertechnologies	MOSFET, N-CH, 60V, 60A, POWERPAK 1212 RoHS: Compliant	1930	500:$1.3800 100:$1.6800 10:$2.0900 1:$2.3200
SISS26DN-T1-GE3	Vishay Intertechnologies	MOSFET N-CHANNEL 60V 60A 1212-8S	6015	1:¥34.1981 100:¥17.5094 1500:¥10.7158 3000:¥8.1011

SISS26DN-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes