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SISS05DN-T1-GE3

SISS05DN-T1-GE3
Mfr. #:
SISS05DN-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET P-Channel 30 V (D-S) MOSFET
Lifecycle:
New from this manufacturer.
Datasheet:
SISS05DN-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
SISS05DN-T1-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
PowerPAK-1212-8
Number of Channels:
1 Channel
Transistor Polarity:
P-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
108 A
Rds On - Drain-Source Resistance:
5.8 mOhms
Vgs th - Gate-Source Threshold Voltage:
1 V
Vgs - Gate-Source Voltage:
- 20 V, + 16 V
Qg - Gate Charge:
76 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
65.7 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
TrenchFET
Packaging:
Reel
Transistor Type:
1 P-Channel
Brand:
Vishay / Siliconix
Fall Time:
13 ns
Product Type:
MOSFET
Rise Time:
15 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
47 ns
Typical Turn-On Delay Time:
16 ns
Tags
SISS0, SISS, SIS
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
TrenchFET® P-Channel MOSFETs
Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.
Image Part # Description
SISS05DN-T1-GE3

Mfr.#: SISS05DN-T1-GE3

OMO.#: OMO-SISS05DN-T1-GE3

 MOSFET P-Channel 30 V (D-S) MOSFET
Availability
Stock:
Available
On Order:
1989
Enter Quantity:
Current price of SISS05DN-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.26
$1.26
10
$1.04
$10.40
100
$0.80
$80.10
500
$0.69
$344.00
1000
$0.54
$543.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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