PartNumber | 2N70 | 2N700 | 2N700.215 |
Description | N-Ch 60V 0,3A 0,2W 5R SOT23 | ||
Manufacturer | - | - | |
Product Category | FETs - Single | - | - |
Series | - | - | - |
Packaging | Bulk | - | - |
Part Aliases | 2N7000_NL | - | - |
Unit Weight | 0.007090 oz | - | - |
Mounting Style | Through Hole | - | - |
Package Case | TO-226-3, TO-92-3 (TO-226AA) | - | - |
Technology | Si | - | - |
Operating Temperature | -55°C ~ 150°C (TJ) | - | - |
Mounting Type | Through Hole | - | - |
Number of Channels | 1 Channel | - | - |
Supplier Device Package | TO-92-3 | - | - |
Configuration | Single | - | - |
FET Type | MOSFET N-Channel, Metal Oxide | - | - |
Power Max | 400mW | - | - |
Transistor Type | 1 N-Channel | - | - |
Drain to Source Voltage Vdss | 60V | - | - |
Input Capacitance Ciss Vds | 50pF @ 25V | - | - |
FET Feature | Standard | - | - |
Current Continuous Drain Id 25°C | 200mA (Ta) | - | - |
Rds On Max Id Vgs | 5 Ohm @ 500mA, 10V | - | - |
Vgs th Max Id | 3V @ 1mA | - | - |
Gate Charge Qg Vgs | - | - | - |
Pd Power Dissipation | 400 mW | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Id Continuous Drain Current | 200 mA | - | - |
Vds Drain Source Breakdown Voltage | 60 V | - | - |
Rds On Drain Source Resistance | 1.2 Ohms | - | - |
Transistor Polarity | N-Channel | - | - |
Forward Transconductance Min | 0.1 S | - | - |
Channel Mode | Enhancement | - | - |