PartNumber | HGT1S10N120BNST | HGT1S10N120BNS | HGT1S12N60A4DS |
Description | IGBT Transistors N-Channel IGBT NPT Series 1200V | IGBT Transistors 35A 1200V NPT N-Ch | IGBT Transistors 12A 600V N-Ch |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
RoHS | E | E | E |
Technology | Si | Si | Si |
Package / Case | TO-263AB-3 | TO-263AB-3 | TO-263AB-3 |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | 1200 V | 1200 V | 600 V |
Collector Emitter Saturation Voltage | 2.7 V | 2.7 V | 2.7 V |
Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
Continuous Collector Current at 25 C | 35 A | 35 A | 54 A |
Pd Power Dissipation | 298 W | 298 W | 167 W |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Series | HGT1S10N120BNS | HGT1S10N120BNS | HGT1S12N60A4DS |
Packaging | Reel | Tube | Tube |
Continuous Collector Current Ic Max | 35 A | 35 A | 54 A |
Height | 4.83 mm | 4.83 mm | 4.83 mm |
Length | 10.67 mm | 10.67 mm | 10.67 mm |
Width | 9.65 mm | 9.65 mm | 9.65 mm |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
Continuous Collector Current | 55 A | 55 A | 60 A |
Gate Emitter Leakage Current | +/- 250 nA | +/- 250 nA | +/- 250 nA |
Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
Factory Pack Quantity | 800 | 800 | 800 |
Subcategory | IGBTs | IGBTs | IGBTs |
Unit Weight | 0.046296 oz | 0.046296 oz | 0.046296 oz |
Part # Aliases | - | - | HGT1S12N60A4DS_NL |