 |  | | |
| PartNumber | IPP320N20N3 G | IPP320N20N | IPP320N20N3 |
| Description | MOSFET N-Ch 200V 34A TO220-3 OptiMOS 3 | ||
| Manufacturer | Infineon | INFINEON | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 200 V | - | - |
| Id Continuous Drain Current | 34 A | - | - |
| Rds On Drain Source Resistance | 28 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 29 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 136 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Tube | Tube | - |
| Height | 15.65 mm | - | - |
| Length | 10 mm | - | - |
| Series | OptiMOS 3 | OptiMOS 3 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Type | OptiMOS 3 Power-Transistor | - | - |
| Width | 4.4 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 27 S | - | - |
| Fall Time | 4 ns | 4 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 9 ns | 9 ns | - |
| Factory Pack Quantity | 500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 21 ns | 21 ns | - |
| Typical Turn On Delay Time | 11 ns | 11 ns | - |
| Part # Aliases | IPP320N20N3GXKSA1 IPP32N2N3GXK SP000677842 | - | - |
| Unit Weight | 0.211644 oz | 0.211644 oz | - |
| Part Aliases | - | IPP320N20N3GXK IPP320N20N3GXKSA1 SP000677842 | - |
| Package Case | - | TO-220-3 | - |
| Pd Power Dissipation | - | 136 W | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 34 A | - |
| Vds Drain Source Breakdown Voltage | - | 200 V | - |
| Vgs th Gate Source Threshold Voltage | - | 3 V | - |
| Rds On Drain Source Resistance | - | 32 mOhms | - |
| Qg Gate Charge | - | 22 nC | - |
| Forward Transconductance Min | - | 54 S 27 S | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPP320N20N3 G | MOSFET N-Ch 200V 34A TO220-3 OptiMOS 3 | |
| IPP320N20N3GXKSA1 | MOSFET N-Ch 200V 34A TO220-3 OptiMOS 3 | ||
| IPP320N20N3GXKSA1 | MOSFET N-CH 200V 34A TO220-3 | ||
| IPP320N20N3G 320N20N | New and Original | ||
| IPP320N20N | New and Original | ||
| IPP320N20N3 | New and Original | ||
| IPP320N20N3 G | Trans MOSFET N-CH 200V 34A 3-Pin TO-220 Tube (Alt: IPP320N20N3 G) | ||
| IPP320N20N3G | POWER FIELD-EFFECT TRANSISTOR, 34A I(D), 200V, 0.032OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB | ||
| IPP320N20N3G , 2SD968A-S | New and Original | ||
| IPP320N20N3G(320N20N) | New and Original | ||
| IPP320N20N3GS | New and Original |