PartNumber | STD3NK100Z | STD3NK100 | STD3NK100ZT4 |
Description | MOSFET Hi Vltg NPN Zener SuperMESH | ||
Manufacturer | STMicroelectronics | ST | - |
Product Category | MOSFET | FETs - Single | - |
RoHS | Y | - | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-252-3 | - | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 1 kV | - | - |
Id Continuous Drain Current | 2.5 A | - | - |
Rds On Drain Source Resistance | 6 Ohms | - | - |
Vgs th Gate Source Threshold Voltage | 3 V | - | - |
Vgs Gate Source Voltage | 10 V | - | - |
Qg Gate Charge | 18 nC | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 90 W | - | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | SuperMESH | - | - |
Packaging | Reel | Digi-ReelR Alternate Packaging | - |
Height | 2.4 mm | - | - |
Length | 6.6 mm | - | - |
Series | STD3NK100Z | SuperMESH | - |
Transistor Type | 1 N-Channel Power MOSFET | 1 N-Channel | - |
Width | 6.2 mm | - | - |
Brand | STMicroelectronics | - | - |
Forward Transconductance Min | 2.4 S | - | - |
Fall Time | 32 ns | 32 ns | - |
Product Type | MOSFET | - | - |
Rise Time | 7.5 ns | 7.5 ns | - |
Factory Pack Quantity | 2500 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 39 ns | 39 ns | - |
Typical Turn On Delay Time | 15 ns | 15 ns | - |
Unit Weight | 0.139332 oz | 0.139332 oz | - |
Package Case | - | TO-252-3, DPak (2 Leads + Tab), SC-63 | - |
Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
Mounting Type | - | Surface Mount | - |
Supplier Device Package | - | D-Pak | - |
FET Type | - | MOSFET N-Channel, Metal Oxide | - |
Power Max | - | 90W | - |
Drain to Source Voltage Vdss | - | 1000V (1kV) | - |
Input Capacitance Ciss Vds | - | 601pF @ 25V | - |
FET Feature | - | Standard | - |
Current Continuous Drain Id 25°C | - | 2.5A (Tc) | - |
Rds On Max Id Vgs | - | 6 Ohm @ 1.25A, 10V | - |
Vgs th Max Id | - | 4.5V @ 50μA | - |
Gate Charge Qg Vgs | - | 18nC @ 10V | - |
Pd Power Dissipation | - | 90 W | - |
Vgs Gate Source Voltage | - | 30 V | - |
Id Continuous Drain Current | - | 2.5 A | - |
Vds Drain Source Breakdown Voltage | - | 1000 V | - |
Rds On Drain Source Resistance | - | 6 Ohms | - |
Qg Gate Charge | - | 18 nC | - |