STW48N60M2-4

STW48N60M2-4 vs STW48N60M2-4 48N60M2

 
PartNumberSTW48N60M2-4STW48N60M2-4 48N60M2
DescriptionMOSFET N-channel 600 V, 0.06 Ohm typ., 42 A MDmesh M2 Power MOSFET in TO247-4 package
ManufacturerSTMicroelectronics-
Product CategoryMOSFET-
RoHSY-
TechnologySi-
Mounting StyleThrough Hole-
Package / CaseTO-247-4-
Number of Channels1 Channel-
Transistor PolarityN-Channel-
Vds Drain Source Breakdown Voltage600 V-
Id Continuous Drain Current42 A-
Rds On Drain Source Resistance60 mOhms-
Vgs th Gate Source Threshold Voltage2 V-
Vgs Gate Source Voltage25 V-
Qg Gate Charge70 nC-
Maximum Operating Temperature+ 150 C-
Pd Power Dissipation300 W-
ConfigurationSingle-
Channel ModeEnhancement-
TradenameMDmesh-
PackagingTube-
SeriesSTW48N60M2-4-
Transistor Type1 N-Channel-
BrandSTMicroelectronics-
Fall Time119 ns-
Product TypeMOSFET-
Rise Time17 ns-
Factory Pack Quantity600-
SubcategoryMOSFETs-
Typical Turn Off Delay Time13 ns-
Typical Turn On Delay Time18.5 ns-
Manufacturer Part # Description RFQ
STMicroelectronics
STMicroelectronics
STW48N60M2-4 MOSFET N-channel 600 V, 0.06 Ohm typ., 42 A MDmesh M2 Power MOSFET in TO247-4 package
STW48N60M2-4 MOSFET N-CH 600V 42A TO247-4
STW48N60M2-4 48N60M2 New and Original
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